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BOROFILM TYPE B

Borofilm type B is a polymer solution containing boron which is applied to silicon wafers by spinning. When the silicon wafer coated with Borofilm type B is subjected to diffusion temperatures, the polymer film decomposes to yield CO₂, H₂O and B₂O₃. The B₂O₃ is the source of boron for the diffusion.

Specifications for Borofilm Type B

PROCESSING

Wafer treatment prior to spinning.
While Borofilm type B is not particularly sensitive to surface condition of the wafer, more uniform results will be obtained with a hydrophillic surface as is obtained by treating the wafer with hot
H₂SO₄ + H₂O₂ or hot nitric acid etch prior to coating.

Spinning
The recommended spin speed for coating the wafer is 6000 thick films will exhibit cracking at the diffusion temperatures. Should such cracking be observed, higher spin speed which produces a thinner film should be employed.

Pre-bake
After spinning the wafer should be bake at 150 - 200^oC in air.

DIFFUSION

Borofilm type B is intended for applications requiring a rpm. Excessively deep diffusion with low sheet resistivity and high C0. Diffusion temperatures are in the range of 1200 to 1300^oC.

A typical diffusion process is as follows:

After diffusion the films are removed in conc HF solution. Should a boron stain be exhibited, this may be avoided by use of a thinner film, or by increasing the oxygen content of the ambient during diffusion.

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