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EMULSITONE COMPANY
19 Leslie Court
Whippany, New Jersey 07981
TEL. (973)386-0053
FAX (973)503-0256
BOROSILICAFILM 5 x 1020
Borosilicafilm 5 x 1020 is designed to produce boron doped layers in silicon and other semiconductors. The material is applied by spinning on the wafer or by spraying. A film forms consisting of silica with boron dissolved in it. The solvent in Borosilicafilm is ethyl alcohol. If it is desired to dilute the material, in addition to ethyl alcohol, methanol or isopropyl may be used as diluents. Borosilicafilm is hygroscopic. The bottle should be securely sealed to prevent access of water vapor when not in use.
APPLICATION
One or two drops of Borosilicafilm is sufficient to cover a 1
1/2" wafer. Ten to fifteen seconds of spinning are
sufficient. Spin speed should be selected which minimizes the lip
which is observed at the edge of the wafer. After spinning, the
wafer may be heated at 50oC to 80oC to
harden the film.
DIFFUSION
Borosilicafilm is especially useful where very low sheet
resistance is desired. Since the film consists of SiO2
doped with boron, nitrogen atmosphere may be employed during the
diffusion at high temperatures. No erosion or attack of the
silicon surface will occur since the oxide serves to protect the
surface. Lower sheet resistance will be observed in N2
for 1 hour, a sheet resistance less than 1 ohm per square can be
obtained. Lower sheet resistance may be obtained by providing a
thicker film which is not readily depleted thereby allowing the
sheet resistance to decrease with the square root of the time for
longer periods than with thinner films. For rectifier production
where a single diffusion is carried out to achieve n+ and p
doping on opposing surfaces, Borosilicafilm will yield the
desired results with no cross doping due to volatilization.
Lower surface concentrations may be obtained in one-step
diffusions with specially formulated Borosilicafilm. Sheet
resistances from one ohm per square to over 10,000 ohms/sq. may
be obtained.
DIFFUSION CHARACTERISTICS OF BOROSILICAFILM 5 x 1020
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| Sheet Resistivity Penetration | ||||
| Temperature (oC) | Time (Hours) | Ohms/Square | Microns | Atoms/cm3 |
| 1100 | 1/4 | 8.0 | 1.1 | 5X1020 |
| 1100 | 4 | 3.0 | 4.3 | 5X1020 |
| 1200 | 1/4 | 3.0 | 3.0 | 5X1020 |
| 1200 | 4 | 0.75 | 12.3 | 5X1020 |
| 1250 | 1/4 | 0.90 | 5.7 | 5X1020 |
| 1250 | 4 | 0.50 | 23.0 | 5X1020 |
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