19 Leslie Court
Whippany, New Jersey 07981
GALLIUMFILM FOR CHANNEL STOPPING
GALLIUMFILM FOR CHANNEL STOPPING is applied to a silicon wafer with 10,000 to 15,000 angstroms of field oxide, by spinning at 3000 rpm. After spinning, the wafers should be baked at 200oC for 15 minutes in air. This baking process is most important to obtain uniform doping of the wafers.
The wafers, coated with dopant and after baking, are diffused at the temperatures noted below. The wafers are supported in ladder boats with the coated sides facing each other. The separation of the wafers should be no more than 1/16th inch. The diffusion is carried out in dry N2 or argon which is free of O2.
|Temperature||Time||Rs (Ohms/Sq.)||Xj (Microns)|
|Alphabetic Product Listing||
|Material Safety Data Sheet|