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EMULSITONE COMPANY
19 Leslie Court
Whippany, New Jersey 07981
TEL. (973)386-0053
FAX (973)503-0256
PHOSPHOROSILICAFILM 3 x 1020
Phosphorosilicafilm 3 x 1020 is a dopant formulation
designed to produce phosphorous diffused layers in Silicon for Solar Cells. These layers
may be produced routinely with sheet resistance profiles over the wafer surface flatter
than 1-2%. Similar reproducibility from wafer to wafer and from run to run is easily
achieved. When applied by spinning or spraying, a film is generated that consists of
silica with phosphorous dissolved in it. This phosphorous doped silica layer provides an
erfc source, and the sheet resistance decreases linearly with the square root of the
diffusion time.
Phosphorosilicafilm 3 x 1020 contains ethyl alcohol as solvent. In addition to
ethyl alcohol, methanol or isopropyl alcohol may be used as diluents if it is desired to
dilute the "as-received" formulation.
Phosphorosilicafilm 3 x 1020 is hygroscopic and for extended storage, the
container should be securely fastened to prevent access of water vapor. The bottle may be
left open for reasonable periods of time with no deleterious effects. After films have
been applied by spinning or spraying, the wafers may be processed directly. However, if it
is desired to store the wafers for extended periods of time after film application and
prior to diffusion, the films should be hardened so that the layer is insoluble in water,
and the wafers may be stored with no loss in doping characteristics.
Application
The viscosity of Phosphorosilicafilm 3 x 1020 is quite low, and the material
wets readily to silicon surface. Approximately 1-1.5 ml will cover a four-inch wafer. For
shallow penetrations where the source is not depleted, the sheet resistance obtained is
independent of spin speed. A spin speed should be selected which minimizes the lip which
builds up at the edge of the wafer. In 10 to 15 seconds of spinning, the film will be
formed.
Diffusion
Diffusion is carried out in nitrogen atmosphere with 1-2% oxygen. Typical diffusion
results are obtained as shown in the table following. Refer to a standard textbook
for your desired profile.
| Diffusion Temperature (oC) |
Time (min.) | Xj (junction depth) |
V/I (ohms/square) |
Q (Atoms/cm.) |
| 925 | 15 | 0.13 | 18 | 1.0E15 |
| 925 | 30 | 0.18 | 12 | 1.4E15 |
| 950 | 15 | 0.18 | 12 | 1.5E15 |
| 950 | 30 | 0.26 | 9 | 2.1E15 |
| 975 | 15 | 0.26 | 8 | 2.1E15 |
| 975 | 30 | 0.37 | 6 | 2.9E15 |
Surface Condition
Phosphorosilicafilm 3 x 1020 will yield no surface damage or deposits. The
phosphorous doped silica film is easily removed in dilute HF solution.
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