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EMULSITONE COMPANY
19 Leslie Court
Whippany, New Jersey 07981
TEL. (973)386-0053
FAX (973)503-0256
SILICAFILM 10,000
Silicafilm 10,000 is similar to Silicafilm with the exception that a
thickener has been added to the solution. When applied by spinning a thick glassy layer
will form, which must be heated to remove the thickener. After spinning at 3000 rpm the
film should be heated at 200oC for 15 minutes in air to densify the film. This
heat treatment is followed by heating at 450 - 500oC for one hour in air to
remove the thickener by oxidation.
Silicafilm 10,000 etches more rapidly than more conventional SiO2 films. For
example, a typical etch rate in 5% HF solution at 25oC is 150 angstroms/sec.
for a film heated at 500oC.
Suggested Applications:
Two level Metallization
Silicafilm 10,000 can be used in two level metallization processes in conjunction with
standard Silicafilm. When standard Silicafilm is applied over the first layer of
metallization and densified at 200oC, it forms a pin hole free film which
prevents dendritic growth from the metal (usually aluminum) which results in electrical
shorts. The standard Silicafilm yields a layer of SiO2 of 2000 angstroms when
spun at 3000 rpm. Silicafilm 10,000 is then applied over the standard SiO2
layer to yield greater separation of the second metal layer from the first layer so as to
yield lower capacitative couplings than would occur if only the 2000 angstrom layer were
present.
Groove Filling
For various "V" groove processes, one desires to level out the groove for better
support for subsequent metallization. Because of its disordered structure, a film of
Silicafilm 10,000 will provide such leveling with no cracking.
Ion-implant Masking
For some ion-implant applications where intense beams are required, photo resist masking
can prove inadequate especially where narrow line widths are required. Silicafilm 10,000
will prove most useful in these instances. After deposition of the film, thin photo resist
layers which offer greater capability of maintaining narrow line widths are used for
delineation. The mild etching solution which will remove the Silicafilm 10,000 will then
not undercut the photo resist.
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