19 Leslie Court
Whippany, New Jersey 07981
SILICAFILM 13 FOR TRI LEVEL PROCESSING
SILICAFILM 13 forms a 500 angstrom film when spun at 3000 rpm. After baking at 180oC
for 60 minutes a hard dense film results which can be patterned and used as a mask for wet
or dry etching of the thick polymer under layer used in tri level processing.
DENSITY - .808
VISCOSITY - 1.35 cp
|Na < 1 ppm||Mn < 1 ppm|
|K < 1 ppm||Cu < 1 ppm|
|Fe < 1 ppm||Au < 1 ppm|
|Ni < 1 ppm||Pt < 1 ppm|
1. Spin thick first layer of positive resist (approximately 2 microns) and bake at 120oC for 60 minutes. Lower bake temperature or shorter time may result in a cracked film. Similar considerations apply to polyamide layers.
2. Spin Silicafilm 13 at 3000 rpm. Bake at 180oC in air or at higher temperatures compatible with the first polymer layer.
3. Spin thin positive photo sensitive layer and expose and develop as per usual process.
4. Silicafilm 13 may be patterned by etching in buffered HF solution, or by plasma etching.
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